Engineering, 10.06.2021 18:40 dondre54

For a p-type silicon with boron acceptor density NA=1×1016 cm−3,Calculate the temperature at which only half of the acceptors are ionized. The ionization energy of born acceptor in silicon is 0.045 eV. Assume the bandgap is independent of temperature.

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For a p-type silicon with boron acceptor density NA=1×1016 cm−3,Calculate the temperature at which...