Consider the growth of a 20-nm-diameter silicon nanowire onto a silicon wafer. the temperature of the wafer surface is maintained at 2400 k. assume the thermal conductivity of the silicon nanowire is 20 wm-1k-1 and all its surfaces including the tip are subjected to convection heat transfer with the coefficient h = 1×105 wm-2k-1 and t∞ = 8000 k. when the nanowire grows to l = 300 nm, what is the temperature of the nanowire tip (t (x =
Which describes an object in projectile motion? check all that apply. a.gravity acts to pull the object downb. the object moves in a straight path. c.the forward velocity of the object is 0 m/s. d.the object’s inertia carries it forward. e.the path of the object is curved.
Suppose that the half-life of an element is 1000 years. how many half-lives will it take before one-eighth of the original sample remains? 8 125 12.5 3