3. consider an mos capacitor with n+ polysilicon gate and n-type silicon substrate. assume nd=1016cm-3 and let ef-ec=0.2 ev in the n+ polysilicon. assume the oxide has a thickness of tox= 300å. also assume that (polysilicon)=(crystal silicon). (a) calculate the metal-semiconductor work function difference. (b) calculate the threshold voltage for the ideal case of zero fixed oxide charge and zero interface states

If an object with an initial temperature of 300 k increases its temperature by 1°c every minute, by how many degrees fahrenheit will its temperature have increased in 10 minutes? (a) 6°f (b) 10°f (c) 18°f (d) 30°f

1point) a skydiver weighing 130 lb (including equipment) falls vertically downward from an altitude of 14,000 ft and opens the parachute after 20 s of free fall. assume that the force of air resistance, which is directed opposite to the velocity, is of magnitude 0.85|v|0.85|v| when the parachute is closed and is of magnitude 17|v|17|v| when the parachute is open, where the velocity vv is measured in ft/s. assume that acceleration due to gravity has magnitude 32 ft/s/s; remember that weight is the product of mass and gravitational acceleration. find the speed of the skydiver when the parachute opens. speed is 150.6121788 ft/s find the skydiver's height when the parachute opens. height is 2338.98591 ft find the limiting velocity vlvl after the parachute opens. (think about whether this should be positive or negative.) vl=vl= 7.647 ft/s

The velocity of car is 80.0 miles per hour. what is the velocity of car in meters per second? (1 km -0.621 miles) m/s