In a particular semiconductor, the fermi energy is located 0.4 ev above the intrinsic
en...
Physics, 23.10.2019 15:50 MIYAISSAVGE2409
In a particular semiconductor, the fermi energy is located 0.4 ev above the intrinsic
energy with ef – ei = 0.4 ev. assume that the silicon semiconductor is at room
temperature and the intrinsic carrier concentration, ni = 1010 cm-3
. (boltzmann constant,
k = 8.617 x 10-5 ev/k.)
a. determine the conduction electron concentration.
b. determine hole concentration.
c. calculate the product of n * p.
in a particular semiconductor, the fermi energy is located 0.3 ev below the intrinsic
energy with ei – ef = 0.3 ev. assume that the silicon semiconductor is at room
temperature and the intrinsic carrier concentration, ni = 1010 cm-3
. (boltzmann constant,
k = 8.617 x 10-5 ev/k.)
a. determine the conduction electron concentration.
b. determine hole concentration.
c. calculate the product of n * p. compare to your answer in problem 8(c). is this
a coincidence? (hint: multiply the equations for n and p.)
Answers: 3
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