Physics, 11.10.2019 03:00 tajajohn7597
Consider a photoresist line whose cross-sectional profile has a trapezoidal shape with a sidewall angle θ (near 90º) with respect to the wafer surface. if the resist has vertical and horizontal etch rates rv and rh, respectively, derive an expression for the rate at which the critical dimension (horizontal width) of the resist feature decreases with etch time.
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Consider a photoresist line whose cross-sectional profile has a trapezoidal shape with a sidewall an...
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