One integrated circuit design calls for the diffusion of arsenic into silicon wafers; the background concentration of as in si is 2.5 × 1020 atoms/m3. the predisposition heat treatment is to be conducted at 1000°c for 45 minutes, with a constant surface concentration of 8 × 1026 as atoms/m3. at a drive-in temperature of 1100°c, determine the diffusion time required for a junction depth of 1.2 μm. for this system, values of qd and d0 are 4.10 ev and 2.29 × 10−3 m2/s, respectively.