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An ideal n-channel mosfet has the following parameters: w 50 1-5 μm, tox_ 0.05 rn, na-10 15 cm, 3, n+ independent of vg). ignore the bulk charge effect and velocity saturation. determine: 10 cm . poly-si gate. μη,-800 cm2/v/s (and (a) vt (b) idsat if g-2v (c) dlds/ dvds if vg-2v and vd-0
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An ideal n-channel mosfet has the following parameters: w 50 1-5 μm, tox_ 0.05 rn, na-10 15 cm, 3,...
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