The same sequence may be defined in three ways: 1) f(x) = 3x + 4 for x = {1, 2, 3, }, 2) a1 = 4 and an + 1 = an + 3 for n = {1, 2, 3, } and 3) an = 4 + 3(n − 1) for n = {1, 2, 3, }. they are all supposed to generate the same values, but one version may contain an error. if one version contains an error, identify the one with the error and fix it. a) none of these have errors, they all generate the same sequence. b) f(x) = 3x + 4 for x = {1, 2, 3, } it should say f(x) = 3x + 1 for x = {1, 2, 3, }. c) an = 4 + 3(n − 1) for n = {1, 2, 3, } it should say an = 3 + 4(n − 1) for n = {1, 2, 3, }. d) a1 = 4 and an + 1 = an + 3 for n = {1, 2, 3, } it should say a1 = 3 and an + 1 = an + 4 for n = {1, 2, 3, }.

Data on oxide thickness of semiconductors are as follows: 426 432 418 418 421 436 418 408 431 435 423 426 411 434 435 432 411 426 407 439 422 426 412 416 consider this data as a sample of the population. (a) calculate a point estimate of the mean oxide thickness for all wafers in the population. (round your answer to 3 decimal places.) (b) calculate a point estimate of the standard deviation of oxide thickness for all wafers in the population. (round your answer to 2 decimal places.) (c) calculate the standard error of the point estimate from part (a). (round your answer to 2 decimal places.) (d) calculate a point estimate of the median oxide thickness for all wafers in the population. (express your answer to 1 decimal places.) (e) calculate a point estimate of the proportion of wafers in the population that have oxide thickness greater than 430 angstrom. (round your answer to 4 decimal places.)