Engineering, 14.06.2020 01:57 Demondevilg
1) We want to design a heterojunction InP / InGaAsP / InGaAs LED for 1.3 m emission with an area A = 0.01 mm2 and an output optical power Pout = 10 mW. The maximum injected charge density in the active InGaAsP layer is n = 5 x 1017 cm-3 . The effective refractive index of the heterostructure is 3.5 and the refractive index of the encapsulation material is 1.5. Evaluate the thickness of the active region assuming the radiative lifetime is 3 ns and external quantum efficiency is 40%. (You can assume that the extraction is only affected by the reflection losses, therefore extraction efficiency can be assumed to be equal to (1- Reflectance). To simplify the calculations, you can assume that the photons are only hitting the boundaries at normal incidence)
Answers: 3
Engineering, 03.07.2019 14:10, kayabwaller4589
When at a point two solid phase changes to one solid phase on cooling then it is known as a) eutectoid point b) eutectic point c) peritectic point d) peritectoid point
Answers: 3
Engineering, 04.07.2019 18:20, hayleymckee
Steam enters a converging nozzle at 3.0 mpa and 500°c with a at 1.8 mpa. for a nozzle exit area of 32 cm2, determine the exit velocity, mass flow rate, and exit mach number if the nozzle: negligible velocity, and it exits (a) is isentropic (b) has an efficiency of 94 percent
Answers: 2
1) We want to design a heterojunction InP / InGaAsP / InGaAs LED for 1.3 m emission with an area A...
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