Engineering, 16.03.2020 21:33 andrea1704

A particular NMOS device has parameters VT N = 0.6 V, L = 0.8µm, tox = 200 Å, and µn = 600 cm2 /V–s. A drain current of ID = 1.2 mA is required when the device is biased in the saturation region at VGS = 3 V. Determine the required channel width of the device.

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A particular NMOS device has parameters VT N = 0.6 V, L = 0.8µm, tox = 200 Å, and µn = 600 cm2 /V–s....