As a general rule of thumb, the ratio of the rate of etch-product formation to the flow rate of etch gas should be greater than 0.1 for uniform etching. Suppose a 7.5-cm diameter silicon wafer is etched at a rate of 50 nm/min in a CF4 plasma.
(a) How many atoms of Si are removed per minute?
(b) What evolution rate of SiF4 does this correspond to in standard cubic centimeters per minute (sccm)?
(c) What minimum CF4 flow rate should be maintained?

If you were designing a bumper for a car, would you prefer it to exhibit elastic or plastic deformation? why? consider the functions of a bumper in both a minor "fender-bender" and a major collision.

Aloaded platform of total mass 500 kg is supported by a dashpot and by a set of springs of effective stiffness 72 kn/m. it is observed that when the platform is depressed through a distance x = 12.5 cm below its equilibrium position and then released without any initial velocity; it reaches its equilibrium position in the shortest possible time without overshoot. find the position and velocity of the loaded platform 0.10 sec. after its release. if a further load of 400 kg is added to the platform, find, i) the frequency of damped vibrations, and i) the amplitude of vibration after 2 complete oscillations, given that the initial amplitude is 15 cm.

Consider a large isothermal enclosure that is maintained at a uniform temperature of 2000 k. calculate the emissive power of the radiation that emerges from a small aperture on the enclosure surface. what is the wavelength ? , below which 10% of the emission is concentrated? what is the wavelength ? 2 above which 10% of the emission is concentrated? determine the wavelength at which maximum spectral emissive power occurs. what is the irradiation incident on a small object placed inside the enclosure?