Engineering, 06.03.2020 23:56 mckinleesmomp6qj1e

A silicon pnp bipolar transistor at T = 300 K has a B-E cross-sectional area of ABE = 5 × 10-4 cm, neutral base width of x,-0.70 ㎛, a neutral emitter width of x,-0.50 μm. and uniform doping concentrations of N,-5 × 1017 cm-3, Ns = 1016 cm-3, and Nc-1015 cm-3. Other transistor parameters are DB-10 cm2/s, D.-15 cm2/s, TED-Tm-5 × 10-7 s, and Tco-2 × 10-6 s. The transistor is biased in the forward-active mode and the recombination factor is δ = 0.995. Determine the collector current for (a) VEB-0.550 V. (b) 1.-0.80 μA, and

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A silicon pnp bipolar transistor at T = 300 K has a B-E cross-sectional area of ABE = 5 × 10-4 cm, n...