Engineering, 21.12.2019 01:31 jjhagan22
Consider a cmos inverter fabricated in a 65-nm cmos process for which vdd =1v, vtn =−vtp =0.35 v, and μncox =2.5μpcox =470 μa/v2. in addition, qn and qp have l = 65nm and(w/l)n =1.5.
(a) find wp that results in vm =vdd/2. what is the silicon area utilized by the inverter in this case?
(b) for the matched case in(a), find the values of voh, vol, vih, vil, nml, and nmh.
(c) for the matched case in (a), find the output resistance of the inverter in each of its two states.
Answers: 3
Engineering, 03.07.2019 14:10, kayabwaller4589
When at a point two solid phase changes to one solid phase on cooling then it is known as a) eutectoid point b) eutectic point c) peritectic point d) peritectoid point
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Engineering, 03.07.2019 14:10, volleyballfun24
If the thermal strain developed in polyimide film during deposition is given as 0.0044. assume room temperature is kept at 17.3 c, and thermal coefficient of expansion for the film and the substrate are 54 x 10^-6c^-1 and 3.3 x 10^-6c^-1respectively. calculate the deposition temperature.
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Engineering, 04.07.2019 16:10, TheOriginalMeyah
An electrical motor raises a 50kg load at a construct velencity .calculate the power of the motor, if it takes 40sec to raise the load through a height of 24m(take g =9.8n/g)
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Consider a cmos inverter fabricated in a 65-nm cmos process for which vdd =1v, vtn =−vtp =0.35 v, an...
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