Engineering, 02.12.2019 22:31 MyLove7817

For a si/si1-xgex /si hetero-junction bipolar transistor, x=0.1 in the base region and x=0 in the emitter and collector regions. bandgap of the base region is 12% smaller than that of si. if the base current is due to emitter injection efficiency only, calculate improvement in the common emitter current gain at 10 oc over 120 o c.

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For a si/si1-xgex /si hetero-junction bipolar transistor, x=0.1 in the base region and x=0 in the em...