Engineering, 12.11.2019 21:31 tangia
Using the circuit topology displayed in fig.7.48(e), arrange to bias the nmos transistor at id =0.5ma with vd midway between cutoff and the beginning of triode operation. the available supplies are ±5v. for the nmos transistor, vt =1.0 v, λ=0,andkn=1ma/v 2.useagate-biasresistor of 10m? . specify rs and rd to two significant digits.
Answers: 2
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The filament of an incandescent lamp has a temperature of 2000k. calculate the fraction of radiation emitted in the visible light band if the filament is approximated as blackbody
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Draw the engineering stress-strain curve for (a) bcc; (b) fcc metals and mark important points.
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Using the circuit topology displayed in fig.7.48(e), arrange to bias the nmos transistor at id =0.5m...
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