Silicon Include photolithography steps (assume masks are deposited at low temperature and not thermal oxides – i. e., no diffusion during the oxide mask steps) Use graphs, parameters or tables from the course slides and text. If you need different parameters, cite them (to the extent that someone can go to the citation you provided and see the data used) Epitaxy – VPE silicon, 1150 °C is the maximum temperature, growth rate < 0.5 m / min (use the conditions used to produce the chart for silicon vpe in the comprehensive review – slide 19). Ignore charged vacancy effects and electric field effects for any diffusion process. The maximum concentration in the p+ and n+ regions should be > 1018 cm-3. These regions should have a "rectangular" doping profile. The p-region should be in the range of 1015 cm-3 but here simply specify the dopant and the input ratio of the dopant precursor and the silicon precursor concentrations (assume the dopant does not alter the epitaxial growth rate). The n-well region should be in the range of 1016 cm-3 for at least 50 % of the thickness with a surface concentration no higher than 5x1016 cm-3 All thicknesses / depths have a tolerance of  20% and concentrations within a factor of two (so you don’t have to tweak your times / temperatures more than a few times) Qualitatively, what would you expect the substrate / epi dopant concentration profiles to look like? Abrupt? Graded? Why?