Chemistry, 18.03.2021 01:50 astultz309459

Phosphorus is implanted into silicon. The implant parameters are a dose of 1015cm-2at an energy of 150keV. a)Find the depth of the peak of the implant profile and its value at that depth. b)If the wafer originally had 1016cm-3of boron uniformly distributed throughout, find the depth(s) at which the concentration of phosphorus is equal to the concentration of boron.

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Phosphorus is implanted into silicon. The implant parameters are a dose of 1015cm-2at an energy of 1...