An N-type silicon sample has an arsenic dopant density of 1017 cm-3. Determine: a) The temperature at which half the impurity atoms are ionized. (finalize the equation for obtaining the temperature; no need to solve the equation. The same for part b) b) The temperature at which the intrinsic density exceeds the dopant density by a factor of 10. Assume Eg does not change with T. c) Assuming complete ionization, calculate the minority carrier density at 300 K and the location of the Fermi level referred to EC.

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a 20-cm-long, cylindrical graphite (pure carbon) rod is inserted into an oxidizing atmosphere at 1145 k and 1.013 x 105 pa pressure. the oxidizing process is limited by the diffu- sion of oxygen counterflow to the carbon monoxide that is formed on the cylindrical surface.

the seeing the electronic configuration we can say that the element is fluorine.

fluorine is the most electronegative element in the periodic table.

but by only seeing the configuration we cannot say about its reactivity because we don't know if its configuration after excitation or by addition of electrons.

but if not then, it is the lightest halogen and exists as a highly toxic pale yellow diatomic gas at standard conditions. as the most electronegative element, it is extremely reactive: almost all other elements, including some noble gases, form compounds with fluorine.

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